Biography
Manijeh Razeghi joined Northwestern University, Evanston, IL, as a Walter P. Murphy Professor and Director of the Center for Quantum Devices in Fall 1991, where she created the undergraduate and graduate program in solid-state engineering. She is one of the leading scientists in the field of semiconductor science and technology, pioneering in the development and implementation of major modern epitaxial techniques. Her current research interest is in nanoscale optoelectronic quantum devices. She has authored or coauthored more than 1000 papers, more than 31 book chapters, and 18 books. She holds 55 U.S. patents and has given more than 1000 invited and plenary talks. She received the IBM Europe Science and Technology Prize in 1987, the Achievement Award from the SWE in 1995, the R.F. Bunshah Award in 2004 and many best paper awards. Dr. Razeghi is an elected Fellow of SWE (1995), SPIE (2000), IEC (2003), OSA (2004), APS (2004) IOP (2005), IEEE (2005) and MRS (2008). And IBM teacher of excellence 2013, and the 2016 Jan Czochralski Award. She is editor , associate, and Board member of many journals, including Nano Science and Nano technology.
Research Interest
Pioneer in the area of III-V compound semiconductors and optoelectronic devices from the deep ultraviolet to the far infrared spectral bands, including in particular InP and GaAs based semiconductors and devices, which were at the heart of the optical fiber telecommunication revolution of the late 20th Century and the rise of the information age.
Biography
Prof. Vladislav E. Bougrov, Director of School of Photonics, Head of Chair of Light Technologies and Optoelectronics at the ITMO University, St. Petersburg, Russia, a leading Russian University in the filed of Photonics, Photonics Materials, and Quantum Informatics; 42 years old; Master degree in optoelectronics from Department of Optoelectronics chaired by Nobel Prize Laureate Professor Zhores Alferov, Saint Petersburg Electrotechnical University "LETI"; Ph.D. in 1999 and D.Sc. in 2013 in physics from Ioffe Institute, St. Petersburg, Russia; holder of the prize of the Government of Russian Federation in science and engineering; highly qualified in material physics and engineering of semiconductor optoelectronics devices; author of more than 60 papers in reputed journals, inventor in more than 100 patent applications, including more than 30 granted patents; extensive experience with dynamic management of growing international start-up companies, founder of Optogan.
Research Interest
III-nitride based semiconductor heterostructures, ultrahigh performance light-emitting diodes (LEDs), development of novel MOCVD growth technique, advanced laser device structures, bulk materials growth: gallium nitride and gallium oxide.
Biography
Dr. Douglas R McCarter, Dhc, is the Technical Integrator of McCarter Machine & Technology Inc. , founded in 1981. McCarter’s patented and proprietary silicon processes achievements were documented by published technical papers and over 50 oral presentations. In turn, McCarter has won many awards, mentioned in Forbes.com, Kiplinger Letter, Entrepenuer.com, Nasa Tech Briefs, Missile Defense Briefs Open and Classified, and recognized as the current world expert in precision silicon components. McCarter has served as member of editorial staff of Advanced Optical Technology, in Munich Germany since 2012. In 2016, Dr. Babin, Congressman District 37 and leader of Nasa Funding, endorsed McCarter and staffers are working directly with backing of the development of McCarter Silicon Space Systems. In addition to over 3000 hours of Technical Schools, McCarter has been directly mentored by the late Frank Anthony, Bell Labs and past 10 years Roger Paquin Perk & Elmer retired Materials Expert.
Research Interest
Inventor of processes to enable the use of Silicon in Optics and Opto-mechanical structures. McCarter’s Silicon Components are Modular, Scalable and Producible. In particular, McCarter has developed a glass frit bonding process for building meter class systems for ground, flight or space missions.