Jean-Pierre Leburton
University of Illinois
USA
Title: Hot carriers Thz harmonic generation in graphene
Biography
Biography: Jean-Pierre Leburton
Abstract
In this talk, we discuss the onset of sharp resonances exhibited by hot carriers in graphene under the influence of a DC and a-c fields in the presence of spatially and temporarily modulated scattering. These resonances occur when the period of the a-c field corresponds to the time taken by quasi-ballistic carriers to drift over a spatial scattering period, provided the latter is shorter than the distance taken by carriers to emit an optic phonon. Such system can be achieved with inter-digitated gates energized with an a-c bias on graphene layers. Gate separation and fields to achieve ballistic transport would result in resonances in the terahertz range, with the generation of higher harmonics characterized by large Q-factors, which are tunable with gate spacing, and well suited for THz detection.