Philippe Christol
Univ. Montpellier, France
Title: Influence of the InAs/GaSb super lattice period composition on the electro-optical performances of T2SL infrared photodiode
Biography
Biography: Philippe Christol
Abstract
The last past years, Type-II super lattice (T2SL) made of InAs/GaSb nanostructures has emerged as a new material technology suitable for high performance infrared detectors. This was possible because T2SL is a particular quantum system with non-standard optical and electrical properties. Among T2SL specific properties, one of the main interesting is that several structures, with different InAs to GaSb thickness ratios in each SL period, can target the same cut-off wavelength. Recent previous work reports the study of photodiodes with different SL periods having the same cut-off wavelength at 5 µm at 77 K. This study shows the strong influence of the SL composition on dark current measurements, shape of spectral responses, quantum efficiency and type of background doping concentration of nid InAs/GaSb SL active zone. The objective of this communication is to use the flexibility of T2SL to fabricate by MBE a pin photodiode where the active zone is made of different SL periods. Influence of the SL period composition on the electrical and electro optical characterizations are reported and discussed. The results show that optimized SL structure for the MWIR domain can be designed by combining the best of each SL periods.
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