I Filikhin
North Carolina Central University, USA
Title: Electron localizations in binary InAs/GaAs quantum systems and their optical detection
Biography
Biography: I Filikhin
Abstract
We studied the electron localization and spectral distributions of electron localized/delocalized states in binary InAs/GaAs quantum complexes. Such weakly coupled binary systems demonstrated perspectives for nano-sensor applications. Electron tunneling in double quantum dots (DQDs) and quantum wells (DQWs) was studied with dependence on distance between QDs. We showed that the tunneling between identical QDs in DQD goes consecutively from the higher energy levels to the ground state when the inter-dot distance is decreased. The case of non-identical QDs in DQD has an essential difference and the relation between these two cases is discussed. Generally, the violation of symmetry of the DQD geometry reduces tunneling. In particular, we found that electron tunneling is extremely sensitive on shape symmetry violations in binary systems, which can be potentially used for nano-sensing. To investigate the method of detection of the localized/delocalized states change we considered the electron tunneling in InAs/GaAs dot-well complex. Modeling of carrier transfer from the barrier in InAs/GaAs dot-well tunnel-injection structures was performed. A relation between the experiment and our calculations will be presented and perspectives to use the method for nano-sensor applications will be discussed.