Vladimir G Dubrovskii
St. Petersburg Academic University and ITMO University, Russia
Title: Monolithic integration of III-V nanowires with silicon
Biography
Biography: Vladimir G Dubrovskii
Abstract
In this talk, I will review recent achievements in monolithic integration of optical III-V nanowires and nanowire-based heterostructures of different types [axial, radial, “quantum dot in nanowire” and crystal phase wurtzite-zincblende (WZ-ZB) heterostructures] on silicon surfaces. The vapor-liquid-solid (VLS) as well as catalyst-free bottom-up approaches to grow conventional III-V and GaN nanowires on silicon can pave new ways for integration of III-V-based optoelectronics with the existing silicon electronic platform. Due to their small dimensions in contact with the substrate and/or within hetero-interfaces, nanowires allow for a radical decrease of the dislocation density and even the dislocation-free growth of dissimilar semiconductor materials and combinations. In particular, I will show how Ga-catalyzed VLS growth of GaAs nanowires by molecular-beam epitaxy produces size and spatially uniform arrays of photonic nanostructures. I will discuss the optical heterostructures within III-V nanowires and their interfacial abruptness compared to planar layers and then will show some impressive results on the nanowire-based microlasers. I will also demonstrate that the comprehensive growth modeling helps to understand and tune very delicate nanowire properties to the desired values that are often unique and inaccessible within standard planar technologies.