Jun Hee Choi
Samsung Advanced Institute of Technology, South Korea
Title: On-glass/flexible GaN light-emitting diodes and blue light enhancement in CdS/ZnS quantum dots by surface plasmon resonance
Biography
Biography: Jun Hee Choi
Abstract
There have been significant recent developments in the growth of single crystal gallium nitride (GaN) on unconventional templates for large-area blue or green light-emitting diodes (LEDs) which, together with layer transfer onto foreign substrates, can enable flexible and stretchable lighting applications. Here, the heteroepitaxial growth of GaN on amorphous and single-crystal substrates employing various interlayers and nucleation layers is discussed, as well as the use of weak interfaces for layer-transfer onto foreign substrates. Recent progress in low-temperature GaN-based red–green–blue (RGB) LEDs on glass substrates is discussed. Layer-transfer techniques with various interlayers are also discussed. These heteroepitaxial GaN growth and layer-transfer technologies are expected to lead to new lighting and display devices with high efficiency and full-color tunability, which are suitable for large-area, stretchable display and lighting applications. We shall also discuss blue light enhancement in CdS/ZnS quantum dots using surface plasmon resonance to achieve near-unity quantum yield.