Cunzhu Tong
Chinese Academy of Sciences, China
Title: High brightness photonic crystal semiconductor lasers
Biography
Biography: Cunzhu Tong
Abstract
High power diode lasers are the key elements in a wide range of applications such as pumping for solid-state lasers and fi ber lasers, data transfer and material processing and the devices with high emission power and low far-fi eld divergence are desired for many applications. Bragg refl ection waveguide lasers and longitudinal photonic bandgap crystal (LPBC) lasers have been proposed to realize the high brightness diode lasers based on the PBC mechanism. In these devices, light is confi ned by the photonic band-gap eff ect in vertical direction rather than by total interface refl ection (TIR) and low vertical divergence and circular beams have been demonstrated in single devices. In this paper, we introduce our recent work on the high brightness diode lasers based on the PBC waveguide with lateral microstructure. Th e one dimensional PBC structure demonstrated the low divergence (<50) in fast-axis, the lateral microstructure showed the evident improvement of beam quality in slow-axis. Th e high effi ciency of directly coupled into fi ber was achieved. Th e high-power PBC lasers were used for external-cavity spectral beam combining (SBC) and the high brightness was demonstrated.