Peiqi Zhou
University, China
Title: Infrared photoluminescence analysis and optimization of erbium- ytterbium silicate films under different sputtering method
Biography
Biography: Peiqi Zhou
Abstract
In recent years, erbium silicate compound has aroused considerable research as erbium-based materials for small size and high gain light sources in silicon photonics integration, since it contains a high erbium concentration that has no insolubility problem. In addition, ytterbium cations are usually added to the erbium silicate to prevent neighboring erbium ions from causing cooperative upconversion and also act as sensitizers. Methods have been utilized for depositing erbium-ytterbium silicate fi lms include the sol-gel method, sputtering and pulsed laser deposition. Compared with other deposition methods, magnetron sputtering has the advantages of fast deposition rate, high purity, good compactness, good uniformity and strong controllability which has gained rapid development and wide application. There are three main sputtering methods for erbiumytterbium silicate fi lms: co-sputtering, multi-layer alternating sputtering and mixed-target sputtering. Although each of them has its own advantages and disadvantages, their systematical researches and comparisons are not enough. In this paper, a series of erbium-ytterbium silicate fi lms with diff erent compositions were prepared by co-sputtering, multi-layer alternating sputtering and mixed-target sputtering. Several analysis and optimization of the fi lms were given to systematically compare three diff erent sputtering methods, which includes the photoluminescence intensity, crystal structure and luminescence lifetime. The results have laid the foundation for the erbium silicate light source devices preparation.