Ishwara Bhat
Rensselaer Polytechnic Institute, USA
Biography
Ishwara Bhat has received his PhD degree in Electrical Engineering from Rensselaer Polytechnic Institute in 1985 and has joined the Department as a Research Assistant Professor in 1988 and tenure tract Associate Professor in 1991. Since 1999, he has been a Full Professor. His research interests include narrow gap materials such as HgCdTe, InGaSb as well as high band gap materials such as SiC and hBN. He has over 30 years of experience working in II-VI, III-V and IV-IV compounds, and has demonstrated several growth and device innovations. He has published over 150 refereed journal articles and presented in over 100 conferences, both contributed and invited over the last 30 years.