Peter A Bokhan
A V Rzhanov Institute of Semiconductor Physics, Russia
Biography
Peter A Bokhan received PhD and DSc degrees in Optics from Tomsk State University, Tomsk, Russia, in 1973 and 1988, respectively. He has been a Principal Scientist at the A V Rzhanov Institute of Semiconductor Physics, Siberian Branch Russian Academy of Science, Novosibirsk, Russia, since 1995. He is an author of more than 180 journal publications, 8 books and 20 patents. His current research interests include laser physics, gas discharge physics, methods of electron beam generation in gases and laser isotope separation.