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Ousmane I Barry


Ousmane I Barry

Nagoya University, Japan

Biography

Ousmane I Barry is pursuing his fi nal year PhD at Nagoya University (NU) in Japan. He is also a Research Assistant at NU’s Institute of Materials and Systems for Sustainability (IMaSS). His research interests lie in the epitaxial growth and characterization of III-nitride compound semiconductor materials for optoelectronic and high-power device applications.

Abstract

Abstract : Growth and characterization of homoepitaxial m-plane GaN on native bulk GaN substrates: Prospects of next-generation electronic devices