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Ramesh G Mani


Ramesh G Mani

Georgia State University, USA

Biography

Ramesh G Mani obtained his PhD in Physics from the University of Maryland–College Park. He has worked at the Max-Planck-Institute for Solid State Physics in Stuttgart, Germany, University of California–Santa Barbara and Harvard University. He is presently a Faculty Member at Georgia State University in Atlanta, GA. He invented the “anti-hall bar” geometry and demonstrated dual/multiple simultaneous ordinary and quantized hall effects in a single specimen. The work served as the basis for many international patents relating to offset voltage reduction in hall sensors. He also discovered the microwave radiation-induced zero-resistance states in the two dimensional electron system.

Abstract

Abstract : Hall coefficient sign reversal in metamaterials