Si-Young Bae
Nagoya University, Japan
Biography
Si-Young Bae has completed his PhD from Gwangju Institute of Science and Technology (GIST) in South Korea and his Post-doctoral studies from Nagoya University, Institute of Materials and Systems for Sustainability (IMaSS) in Japan. He is currently working as a Researcher of IMaSS in Nagoya University. His research interests have been focused on crystal growth and characterization of III–N wide bandgap compound semiconductors for optoelectronic device applications. He has published more than 25 papers in reputed journals.
Abstract
Abstract : Defect reduction of GaN nano rods on hetero-substrates: Behaviors of basal stacking faults