Karim D Mynbaev
ITMO University, Russia
Title: Recent progress in III-V and II-VI semiconductor nanostructures for mid-infrared optoelectronics
Biography
Biography: Karim D Mynbaev
Abstract
According to conventional wisdom, in regards to optoelectronics, III-V semiconductor materials prevail over their II-VI counterparts due to stronger chemical bonds and more advanced fabrication technology of the former. Ever increasing demand in various types of optical sensors, especially these operating in the infrared part of the spectrum, where they are employed for controlling environment and manufacturing processes, as well as in medical devices, strongly challenges current technology and requires more efficient light sources and photodetectors. In this talk, I will review recent progress in mid-infrared (2-6 µm wavelength range) optoelectronics in regards to competing III-V and II-VI materials and nanostructures. In particular, prospects of II-VI-based light emitters will be considered in view of the latest results achieved with the use of molecular beam epitaxy-grown (Hg and Cd) Te nanostructures, where engineering of compositional fluctuations in the alloy seems to advance the emitting properties of these well-known materials to a new level. Concerning III-V materials, I will consider the results of the latest experiments showing the effects of specific non-radiative recombination processes on the properties of narrow-bandgap light emitters, and discuss the prospects that proper optical confinement promises in terms of increasing the efficacy of such devices. Recent experimental findings will be compared to the results of specified calculations of recombination rates in the materials in question.