Karim D Mynbaev
ITMO University, Russia
Biography
Karim D Mynbaev has received his MSc in Optical-Electronic Systems from St. Petersburg Electro-technical University “LETI” in 1986, and his PhD and DSci degrees in Semiconductor Physics from Ioffe Institute in 1992 and 2007, respectively. His research interests mostly concern narrow-bandgap semiconductors and optoelectronic devices designed to operate in the mid-infrared (2-6 µm wavelength range) part of the spectrum, based on II-VI (Hg,Cd)Te and III-V (InAs(Sb,P)) systems. He is also involved in the studies of defect structure of wide-bandgap materials, such as SiC and GaN. He has authored and co-authored more than 100 papers in international peer-reviewed scientific journals and 2 book chapters. Currently, he heads the Laboratory of Photoelectrical Phenomena in Semiconductors at Ioffe Institute, and serves as a Professor at the Chair of Light Technologies and Optoelectronics at ITMO University.
Abstract
Abstract : Recent progress in III-V and II-VI semiconductor nanostructures for mid-infrared optoelectronics